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6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振

6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振

产品简介

6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振,尺寸5.00mmx3.20mm,频率为200MHZ,输出逻辑LVPECL,电压3.3V ,脚位 6-SMD,XO时钟振荡器(标准),LVPECL差分振荡器,差分晶振,贴片差分晶振,5032mm差分晶振,有源晶体振荡器,石英晶体振荡器,OSC晶振,石英差分晶振,低抖动差分晶振,低功耗差分晶振,电信专用差分晶振,交换机差分晶振,路由器差分晶振,光纤通道差分晶振,产品很适合用于SONET/SDH/OTN,千兆以太网,光纤通道/SAS/SATA,PCI Express,3G-SDI/HD-SDI/SDI,电信,交换机/路由器,FPGA/ASIC时钟生成等。

Si510/511 XO有源石英晶振采用Skyworks Solutions的先进DSPLL技术以提供从100kHz到250MHz的任何频率。与传统XO不同其中每个输出频率需要不同的晶体,Si510/511使用一个固定晶体和Skyworks Solutions的专有DSPLL合成器,以生成该范围内的任何频率。此IC基于该方法允许晶体谐振器提供增强的可靠性,改进的机械坚固性和优异的稳定性.6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振.




产品详情

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LH-1

6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振,尺寸5.00mmx3.20mm,频率为200MHZ,输出逻辑LVPECL,电压3.3V ,脚位 6-SMD,XO时钟振荡器(标准),LVPECL差分振荡器,差分晶振,贴片差分晶振,5032mm差分晶振,有源晶体振荡器,石英晶体振荡器,OSC晶振,石英差分晶振,低抖动差分晶振,低功耗差分晶振,电信专用差分晶振,交换机差分晶振,路由器差分晶振,光纤通道差分晶振,产品很适合用于SONET/SDH/OTN,千兆以太网,光纤通道/SAS/SATA,PCI Express,3G-SDI/HD-SDI/SDI,电信,交换机/路由器,FPGA/ASIC时钟生成等。

Si510/511 XO有源石英晶振采用Skyworks Solutions的先进DSPLL技术以提供从100kHz到250MHz的任何频率。与传统XO不同其中每个输出频率需要不同的晶体,Si510/511使用一个固定晶体和Skyworks Solutions的专有DSPLL合成器,以生成该范围内的任何频率。此IC基于该方法允许晶体谐振器提供增强的可靠性,改进的机械坚固性和优异的稳定性.6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振.LH-2

6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振 参数表

Parameter Symbol Test Condition Min Typ Max Unit
Supply Voltage VDD 3.3 V option 2.97 3.3 3.63 V
2.5 V option 2.25 2.5 2.75 V
1.8 V option 1.71 1.8 1.89 V
Supply Current IDD CMOS, 100 MHz,
single-ended
21 26 mA
LVDS
(output enabled)
19 23 mA
LVPECL
(output enabled)
39 43 mA
HCSL
(output enabled)
41 44 mA
Tristate
(output disabled)
18 mA
OE "1" Setting VIH See Note 0.80 x VDD V
OE "0" Setting VIL See Note 0.20 x VDD V
OE Internal Pull-Up/Pull-
Down Resistor*
RI 45
Operating Temperature TA –40 85 oC

Parameter Symbol Test Condition Min Typ Max Unit
Nominal Frequency FO CMOS, Dual CMOS 0.1 212.5 MHz
FO LVDS/LVPECL/HCSL 0.1 250 MHz
Total Stability* Frequency Stability Grade C –30 +30 ppm
Frequency Stability Grade B –50 +50 ppm
Frequency Stability Grade A –100 +100 ppm
Temperature Stability Frequency Stability Grade C –20 +20 ppm
Frequency Stability Grade B –25 +25 ppm
Frequency Stability Grade A –50 +50 ppm
Startup Time TSU Minimum VDDuntil output
frequency (FO) within specification
10 ms
Disable Time TD FO> 10 MHz 5 µs
FO< 10 MHz 40 µs
Enable Time TE FO> 10 MHz 20 µs
FO< 10 MHz 60 µs
Parameter Symbol Test Condition Min Typ Max Unit
CMOS Output Logic
High
VOH 0.85 x VDD V
CMOS Output Logic
Low
VOL 0.15 x VDD V
CMOS Output Logic
High Drive
IOH 3.3 V –8 mA
2.5 V –6 mA
1.8 V –4 mA
CMOS Output Logic
Low Drive
IOL 3.3 V 8 mA
2.5 V 6 mA
1.8 V 4 mA
CMOS Output Rise/Fall
Time
(20 to 80% VDD)
TR/TF 0.1 to 212.5 MHz,
CL= 15 pF
0.45 0.8 1.2 ns
0.1 to 212.5 MHz,
CL= no load
0.3 0.6 0.9 ns
LVPECL Output
Rise/Fall Time
(20 to 80% VDD)
TR/TF 100 565 ps
HCSL Output Rise/Fall
Time (20 to 80% VDD)
TR/TF 100 470 ps
LVDS Output Rise/Fall
Time (20 to 80% VDD)
TR/TF 350 800 ps
LVPECL Output
Common Mode
VOC 50 Ω to VDD– 2 V,
single-ended
VDD–
1.4 V
V
LVPECL Output Swing VO 50 Ω to VDD– 2 V,
single-ended
0.55 0.8 0.90 VPPSE
LVDS Output Common
Mode
VOC 100 Ω line-line
VDD= 3.3/2.5 V
1.13 1.23 1.33 V
100 Ω line-line, VDD= 1.8 V 0.83 0.92 1.00 V
LVDS Output Swing VO Single-ended, 100 Ω differential
termination
0.25 0.35 0.45 VPPSE
HCSL Output Common
Mode
VOC 50 Ω to ground 0.35 0.38 0.42 V
HCSL Output Swing VO Single-ended 0.58 0.73 0.85 VPPSE
Duty Cycle DC All formats 48 50 52 %
LH-3

Abracon-1

6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振尺寸图Si510 Si511

OSC晶振产品特性:

支持来自的任何频率

100千赫至250兆赫

低抖动操作

2至4周交付周期

总体稳定性包括10年变老

用于电源的片上LDO稳压器

电源噪声滤波

3.3、2.5或1.8 V操作

差分(LVPECL、LVDS、HCSL)或CMOS输出选项

可选集成1:2 CMOS

扇出缓存

OE和接通电源

行业标准5 x 7、3.2 x 5、和2.5 x 3.2毫米封装

无铅,符合RoHS

–40至85℃操作Si510 Si511 1Si510 Si511 2

更多相关Silicon晶振型号

Manufacturer Part Number原厂代码 Manufacturer品牌 Series型号 Frequency 频率 Voltage - Supply电压 Frequency Stability频率稳定度
511ABA148M500BAG Silicon Labs Si511 148.5MHz 3.3V ±25ppm
511ABA155M520BAG Silicon Labs Si511 155.52MHz 3.3V ±25ppm
510BBA000110BAG Silicon Labs Si510 148.35165MHz 3.3V ±25ppm
510FBA000110BAG Silicon Labs Si510 148.35165MHz 2.5V ±25ppm
510BBA155M520BAG Silicon Labs Si510 155.52MHz 3.3V ±25ppm
510FBA155M520AAG Silicon Labs Si510 155.52MHz 2.5V ±25ppm
510ABA000110AAG Silicon Labs Si510 148.35165MHz 3.3V ±25ppm
510FBA000110AAG Silicon Labs Si510 148.35165MHz 2.5V ±25ppm
511FBA155M520AAG Silicon Labs Si511 155.52MHz 2.5V ±25ppm
510ABA155M520AAG Silicon Labs Si510 155.52MHz 3.3V ±25ppm
511ABA148M500AAG Silicon Labs Si511 148.5MHz 3.3V ±25ppm
511FBA148M500AAG Silicon Labs Si511 148.5MHz 2.5V ±25ppm
511FBA156M250AAG Silicon Labs Si511 156.25MHz 2.5V ±25ppm
510FBA212M500BAG Silicon Labs Si510 212.5MHz 2.5V ±25ppm
511FBA212M500BAG Silicon Labs Si511 212.5MHz 2.5V ±25ppm
510ABA212M500BAG Silicon Labs Si510 212.5MHz 3.3V ±25ppm
511ABA200M000BAG Silicon Labs Si511 200MHz 3.3V ±25ppm
510ABA212M500AAG Silicon Labs Si510 212.5MHz 3.3V ±25ppm
510BBA212M500AAG Silicon Labs Si510 212.5MHz 3.3V ±25ppm
510FBA212M500AAG Silicon Labs Si510 212.5MHz 2.5V ±25ppm
510FBA200M000AAG Silicon Labs Si510 200MHz 2.5V ±25ppm
511ABA212M500AAG Silicon Labs Si511 212.5MHz 3.3V ±25ppm
510EBA125M000AAG Silicon Labs Si510 125MHz 2.5V ±25ppm
510ACA47M2500AAG Silicon Labs Si510 47.25MHz 3.3V ±20ppm
530AC106M250DG Silicon Labs Si530 106.25MHz 3.3V ±7ppm
530EC106M250DG Silicon Labs Si530 106.25MHz 2.5V ±7ppm
531AC106M250DG Silicon Labs Si531 106.25MHz 3.3V ±7ppm
531EC106M250DG Silicon Labs Si531 106.25MHz 2.5V ±7ppm
530FC106M250DG Silicon Labs Si530 106.25MHz 2.5V ±7ppm
530BC106M250DG Silicon Labs Si530 106.25MHz 3.3V ±7ppm
531BC187M500DG Silicon Labs Si531 187.5MHz 3.3V ±7ppm
530EC155M520DG Silicon Labs Si530 155.52MHz 2.5V ±7ppm
531EC155M520DG Silicon Labs Si531 155.52MHz 2.5V ±7ppm
530EC187M500DG Silicon Labs Si530 187.5MHz 2.5V ±7ppm
531AC187M500DG Silicon Labs Si531 187.5MHz 3.3V ±7ppm
531EC187M500DG Silicon Labs Si531 187.5MHz 2.5V ±7ppm
530AC000110DG Silicon Labs Si530 148.35165MHz 3.3V ±7ppm
530AC148M500DG Silicon Labs Si530 148.5MHz 3.3V ±7ppm
530EC000110DG Silicon Crystal Si530 148.35165MHz 2.5V ±7ppm
530FC000110DG Silicon Labs Si530 148.35165MHz 2.5V ±7ppm
531EC000110DG Silicon Labs Si531 148.35165MHz 2.5V ±7ppm
531EC148M500DG Silicon Labs Si531 148.5MHz 2.5V ±7ppm
530BC155M520DG Silicon Labs Si530 155.52MHz 3.3V ±7ppm
530EC156M250DG Silicon Labs Si530 156.25MHz 2.5V ±7ppm
530AC187M500DG Silicon Labs Si530 187.5MHz 3.3V ±7ppm
530BC187M500DG Silicon Labs Si530 187.5MHz 3.3V ±7ppm
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