Silicon高质量振荡器Si536/6G路由器晶振/536AB156M250DG，尺寸7.00mmx5.00mm，频率为156.25MHz，输出逻辑LVPECL，电压为3.3V，XO时钟振荡器，石英晶体振荡器，差分晶振，LVPECL输出晶振，有源晶体振荡器，低电压差分振荡器，低抖动差分晶振，低相位差分晶振，低功耗差分晶振，7050mm有源晶振，高质量差分晶振，Si535/536 XO采用了Skyworks Solutions先进的DSPLL电路以在高速差分频率下提供超低抖动时钟。 不像传统的XO，每个输出需要不同的晶体 频率，Si535/536使用一个固定晶体来提供宽范围的输出频率。
该有源晶体振荡器很适合用于10/40/100G数据中心，10G以太网交换机/路由器 光纤通道/SAS/存储，企业服务器，网络 ，电信等领域。Silicon高质量振荡器Si536/6G路由器晶振/536AB156M250DG.
Silicon高质量振荡器Si536/6G路由器晶振/536AB156M250DG 参数表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
| Supply Voltage1 | VDD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | ||||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | ||||||||||||||||||
| Supply Current | IDD |
Output enabled LVPECL LVDS |
— — |
111 90 |
121 98 |
mA | ||||||||||||||||
| Tristate mode | — | 60 | 75 | mA | ||||||||||||||||||
| Output Enable (OE)2 | VIH | 0.75 x VDD | — | — | V | |||||||||||||||||
| VIL | — | — | 0.5 | V | ||||||||||||||||||
| Operating Temperature Range | TA | –40 | — | 85 | °C | |||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
| Nominal Frequency1 | fO | LVPECL/LVDS | 100 | — | 312.5 | MHz | ||||||||||||||||
| Initial Accuracy | fi |
Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | ||||||||||||||||
| Temperature Stability1,2 |
–7 –20 |
— — |
+7 +20 |
ppm | ||||||||||||||||||
| Aging | fa | Frequency drift over first year | ±3 | ppm | ||||||||||||||||||
|
Frequency drift over 20 year life |
— | — | ±10 | ppm | ||||||||||||||||||
| Total Stability2 | Temp stability = ±20 ppm | — | — | ±31.5 | ppm | |||||||||||||||||
| Temp stability = ±7 ppm | — | — | 20 | |||||||||||||||||||
| Powerup Time3 | tOSC | TA= –40°C — +85°C | 10 | ms | ||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
| Nominal Frequency1 | fO | LVPECL/LVDS | 100 | — | 312.5 | MHz | ||||||||||||||||
| Initial Accuracy | fi |
Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | ||||||||||||||||
| Temperature Stability1,2 |
–7 –20 |
— — |
+7 +20 |
ppm | ||||||||||||||||||
| Aging | fa | Frequency drift over first year | ±3 | ppm | ||||||||||||||||||
|
Frequency drift over 20 year life |
— | — | ±10 | ppm | ||||||||||||||||||
| Total Stability2 | Temp stability = ±20 ppm | — | — | ±31.5 | ppm | |||||||||||||||||
| Temp stability = ±7 ppm | — | — | 20 | |||||||||||||||||||
| Powerup Time3 | tOSC | TA= –40°C — +85°C | 10 | ms | ||||||||||||||||||
| Parameter | Symbol | Rating | Unit | |||||||||||||||||||
| Maximum Operating Temperature | TAMAX | 85 | °C | |||||||||||||||||||
| Supply Voltage, 2.5/3.3 V Option | VDD | –0.5 to +3.8 | V | |||||||||||||||||||
| Input Voltage (any inputpin) | VI | –0.5 to VDD+ 0.3 | V | |||||||||||||||||||
| Storage Temperature | TS | –55 to +125 | °C | |||||||||||||||||||
| ESD Sensitivity (HBM, per JESD22-A114) | ESD | 2500 | V | |||||||||||||||||||
| Soldering Temperature (Pb-free profile)2 | TPEAK | 260 | °C | |||||||||||||||||||
| Soldering Temperature Time @ TPEAK(Pb-free profile)2 | tP | 20–40 | seconds | |||||||||||||||||||
Silicon高质量振荡器Si536/6G路由器晶振/536AB156M250DG尺寸图
差分晶振产品特性：
可选择频率从100兆赫到312.5兆赫
3代DSPLL®优越的抖动性能和高功率供应噪声抑制
更好的频率稳定性比锯振荡器
可用LVPECL和LVDS输出
3.3和2.5 V供应选项
工业标准5 x 7毫米包和针
无铅/RoHS兼容
更多相关Silicon晶振型号
| Manufacturer Part Number原厂代码 | Manufacturer品牌 | Series型号 | Frequency 频率 | Voltage - Supply电压 | Frequency Stability频率稳定度 |
| 531FB106M250DG | Silicon Labs | Si531 | 106.25MHz | 2.5V | ±20ppm |
| 531AC156M250DG | Silicon Labs | Si531 | 156.25MHz | 3.3V | ±7ppm |
| 531AC200M000DG | Silicon Labs | Si531 | 200MHz | 3.3V | ±7ppm |
| 531BC148M500DG | Silicon Labs | Si531 | 148.5MHz | 3.3V | ±7ppm |
| 530AC200M000DG | Silicon Labs | Si530 | 200MHz | 3.3V | ±7ppm |
| 530BC200M000DG | Silicon Labs | Si530 | 200MHz | 3.3V | ±7ppm |
| 531BC156M250DG | Silicon Labs | Si531 | 156.25MHz | 3.3V | ±7ppm |
| 530FC200M000DG | Silicon Labs | Si530 | 200MHz | 2.5V | ±7ppm |
| 536BB156M250DG | Silicon Labs | Si536 | 156.25MHz | 3.3V | ±20ppm |
| 536FB156M250DG | Silicon Labs | Si536 | 156.25MHz | 2.5V | ±20ppm |
| 536AB156M250DG | Silicon Labs | Si536 | 156.25MHz | 3.3V | ±20ppm |
| 510FBA125M000BAG | Silicon Labs | Si510 | 125MHz | 2.5V | ±25ppm |
| 511BBA000149BAG | Silicon Labs | Si511 | 74.175824MHz | 3.3V | ±25ppm |
| 510FBA100M000BAG | Silicon Labs | Si510 | 100MHz | 2.5V | ±25ppm |
| 511FBA106M250BAG | Silicon Labs | Si511 | 106.25MHz | 2.5V | ±25ppm |
| 510BBA106M250BAG | Silicon Labs | Si510 | 106.25MHz | 3.3V | ±25ppm |
| 511BBA125M000AAG | Silicon Labs | Si511 | 125MHz | 3.3V | ±25ppm |
| 510BBA100M000AAG | Silicon Labs | Si510 | 100MHz | 3.3V | ±25ppm |
| 510BBA125M000AAG | Silicon Labs | Si510 | 125MHz | 3.3V | ±25ppm |
| 511FBA100M000AAG | Silicon Labs | Si511 | 100MHz | 2.5V | ±25ppm |
| 511BBA106M250AAG | Silicon Labs | Si511 | 106.25MHz | 3.3V | ±25ppm |
| 511FBA148M500BAG | Silicon Labs | Si511 | 148.5MHz | 2.5V | ±25ppm |
| 510FBA148M500BAG | Silicon Labs | Si510 | 148.5MHz | 2.5V | ±25ppm |
| 511BBA156M250BAG | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 511FBA156M250BAG | Silicon Labs | Si511 | 156.25MHz | 2.5V | ±25ppm |
| 510BBA148M500BAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 511BBA156M250AAG | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
| 510FBA156M250AAG | Silicon Labs | Si510 | 156.25MHz | 2.5V | ±25ppm |
| 511ABA155M520AAG | Silicon Labs | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 510FBA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 2.5V | ±25ppm |
| 511BBA155M520AAG | Silicon Labs | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 510BBA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510ABA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |
| 510DBA100M000AAG | Silicon Labs | Si510 | 100MHz | 3.3V | ±25ppm |
| 531AC125M000DG | Silicon Labs | Si531 | 125MHz | 3.3V | ±7ppm |
| 531FC125M000DG | 美国Silicon进口晶振 | Si531 | 125MHz | 2.5V | ±7ppm |
| 530AC156M250DG | Silicon Labs | Si530 | 156.25MHz | 3.3V | ±7ppm |
| 531FC156M250DG | Silicon Labs | Si531 | 156.25MHz | 2.5V | ±7ppm |
| 531FC148M500DG | Silicon Labs | Si531 | 148.5MHz | 2.5V | ±7ppm |
| 531AC155M520DG | Silicon Labs | Si531 | 155.52MHz | 3.3V | ±7ppm |
| 530AC155M520DG | Silicon Labs | Si530 | 155.52MHz | 3.3V | ±7ppm |
| 531BC155M520DG | Silicon Labs | Si531 | 155.52MHz | 3.3V | ±7ppm |
| 531FC200M000DG | Silicon Labs | Si531 | 200MHz | 2.5V | ±7ppm |
| 530BC148M500DG | Silicon Labs | Si530 | 148.5MHz | 3.3V | ±7ppm |
| 536EB156M250DG | Silicon Labs | Si536 | 156.25MHz | 2.5V | ±20ppm |
| 536BB125M000DG | Silicon Labs | Si536 | 125MHz | 3.3V | ±20ppm |
| 531AC622M080DG | Silicon Labs | Si531 | 622.08MHz | 3.3V | ±7ppm |
| 531AC312M500DG | Silicon Labs | Si531 | 312.5MHz | 3.3V | ±7ppm |
| 510ABA000149BAG | Silicon Labs | Si510 | 74.175824MHz | 3.3V | ±25ppm |
| 510BBA000149BAG | Silicon Labs | Si510 | 74.175824MHz | 3.3V | ±25ppm |
| 511FBA000149BAG | Silicon Labs | Si511 | 74.175824MHz | 2.5V | ±25ppm |
| 510ABA106M250BAG | Silicon Labs | Si510 | 106.25MHz | 3.3V | ±25ppm |
| 511ABA106M250BAG | Silicon Labs | Si511 | 106.25MHz | 3.3V | ±25ppm |
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