频率:125MHZ
尺寸:7.00mmx5.00mm
美国Silicon晶振 531BC125M000DG 6G以太网晶振 Si531差分振荡器,尺寸为7.00mmx5.00mm,频率125MHZ,输出逻辑LVDS,XO时钟振荡器(标准),电压为3.3V,脚位6-SMD,LVDS输出晶振,美国进口晶振,差分晶体振荡器,石英晶体振荡器,有源贴片晶振,超声波差分晶振,网络专用差分晶振,测试测量专用差分晶振,低功耗差分晶振,低抖动差分晶振,具有低抖动低电压的特点,很适合用于超声波,SDH,网络,SD/HD视频,测试和测量,时钟和数据恢复,FPGA/ASIC时钟生成等领域.
Si530/531 XO利用天空解决方案的先进DSPLL®电路提供一个高频低抖动时钟。Si530/531 OSC晶振可提供从10到945MHz的任意速率输出频率,并选择频率到1400MHz。与传统的XO不同,每个输出频率都需要一个不同的晶体,而Si530/531使用一个固定的晶体来提供一个大范围的输出频率。这种基于集成电路的方法允许晶体谐振器提供特殊的频率稳定性和可靠性。美国Silicon晶振 531BC125M000DG 6G以太网晶振 Si531差分振荡器.
美国Silicon晶振 531BC125M000DG 6G以太网晶振 Si531差分振荡器,尺寸为7.00mmx5.00mm,频率125MHZ,输出逻辑LVDS,XO时钟振荡器(标准),电压为3.3V,脚位6-SMD,LVDS输出晶振,美国进口晶振,差分晶体振荡器,石英晶体振荡器,有源贴片晶振,超声波差分晶振,网络专用差分晶振,测试测量专用差分晶振,低功耗差分晶振,低抖动差分晶振,具有低抖动低电压的特点,很适合用于超声波,SDH,网络,SD/HD视频,测试和测量,时钟和数据恢复,FPGA/ASIC时钟生成等领域.
Si530/531 XO利用天空解决方案的先进DSPLL®电路提供一个高频低抖动时钟。Si530/531 OSC晶振可提供从10到945MHz的任意速率输出频率,并选择频率到1400MHz。与传统的XO不同,每个输出频率都需要一个不同的晶体,而Si530/531使用一个固定的晶体来提供一个大范围的输出频率。这种基于集成电路的方法允许晶体谐振器提供特殊的频率稳定性和可靠性。美国Silicon晶振 531BC125M000DG 6G以太网晶振 Si531差分振荡器.
美国Silicon晶振 531BC125M000DG 6G以太网晶振 Si531差分振荡器 参数表
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
Supply Voltage1 | V DD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | |||||||||||||||||
2.5 V option | 2.25 | 2.5 | 2.75 | V | |||||||||||||||||||
1.8 V option | 1.71 | 1.8 | 1.89 | V | |||||||||||||||||||
Supply Current | IDD |
Output enabled LVPECL CML LVDS CMOS |
— — — — |
111 99 90 81 |
121 108 98 88 |
mA | |||||||||||||||||
Tristate mode | — | 60 | 75 | mA | |||||||||||||||||||
Output Enable (OE)2 | VIH | 0.75 x V DD | — | — | V | ||||||||||||||||||
VIL | — | — | 0.5 | V | |||||||||||||||||||
Operating Temperature Range | TA | –40 | — | 85 | ºC |
Table 2. CLK± Output Frequency Characteristics | |||||||||||||||||||||||
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
Nominal Frequency1,2 | fO | LVPECL/LVDS/CML | 10 | — | 945 | MHz | |||||||||||||||||
CMOS | 10 | — | 160 | MHz | |||||||||||||||||||
Initial Accuracy | fi |
Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | |||||||||||||||||
Temperature Stability1,3 |
–7 –20 –50 |
— |
+7 +20 +50 |
ppm | |||||||||||||||||||
Aging | fa | Frequency drift over first year | — | — | ±3 | ppm | |||||||||||||||||
Frequency drift over 20 year life |
— | — | ±10 | ppm |
Table 3. CLK± Output Levels and Symmetry | |||||||||||||||||||||||
Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
LVPECL Output Option1 | VO | mid-level | V DD – 1.42 | — | V DD – 1.25 | V | |||||||||||||||||
VOD | swing (diff) | 1.1 | — | 1.9 | VPP | ||||||||||||||||||
VSE | swing (single-ended) | 0.55 | — | 0.95 | VPP | ||||||||||||||||||
LVDS Output Option2 | VO | mid-level | 1.125 | 1.20 | 1.275 | V | |||||||||||||||||
VOD | swing (diff) | 0.5 | 0.7 | 0.9 | VPP | ||||||||||||||||||
CML Output Option2 | VO | 2.5/3.3 V option mid-level | V DD – 1.30 | V | |||||||||||||||||||
1.8 V option mid-level | V DD – 0.36 | V | |||||||||||||||||||||
VOD | 2.5/3.3 V option swing (diff) | 1.10 | 1.50 | 1.90 | VPP | ||||||||||||||||||
1.8 V option swing (diff) | 0.35 | 0.425 | 0.50 | VPP | |||||||||||||||||||
CMOS Output Option3 | V OH | I OH= 32 mA | 0.8 x V DD | V DD | V | ||||||||||||||||||
VOL | I OL= 32 mA | 0.4 | V | ||||||||||||||||||||
Rise/Fall time (20/80%) | tR,t F | LVPECL/LVDS/CML | 350 | ps | |||||||||||||||||||
CMOS with CL= 15 pF | 1 | ns | |||||||||||||||||||||
Symmetry (duty cycle) | SYM |
LVPECL: (diff) LVDS: CMOS: |
V DD – 1.3 V 1.25 V (diff) V DD/2 |
45 | 55 | % |
美国Silicon晶振 531BC125M000DG 6G以太网晶振 Si531差分振荡器 尺寸图
进口有源晶振产品特性:
可用于任何速率输出
频率从10兆赫到945兆赫
并选择1.4 GHz的频率
具有卓越性能的第三代DSPLL®
抖动性能
频率稳定性比
SAW振荡器
内部固定晶体频率
确保高可靠性和低成本
可用的CMOS、LVPECL、LVDS和CML输出
3.3、2.5和1.8 V电源选项
行业标准5 x 7毫米
包装和引脚
更多相关Silicon晶振型号
Manufacturer Part Number原厂代码 | 晶振厂家 | Series型号 | Frequency 频率 | Voltage - Supply电压 | Frequency Stability频率稳定度 |
SI50122-A4-GM | Silicon Labs | SI50122-A4 | 100MHz | 2.25 V ~ 3.63 V | +100ppm |
511ABA156M250AAGR | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
530FC125M000DG | Silicon Labs | Si530 | 125MHz | 2.5V | ±7ppm |
531BC200M000DG | Silicon Labs | Si531 | 200MHz | 3.3V | ±7ppm |
531BC250M000DG | Silicon Labs | Si531 | 250MHz | 3.3V | ±7ppm |
530AC622M080DG | Silicon Labs | Si530 | 622.08MHz | 3.3V | ±7ppm |
511FBA100M000BAG | Silicon Labs | Si511 | 100MHz | 2.5V | ±25ppm |
511BBA106M250BAG | Silicon Labs | Si511 | 106.25MHz | 3.3V | ±25ppm |
510BBA156M250AAG | Silicon Labs | Si510 | 156.25MHz | 3.3V | ±25ppm |
510ABA156M250AAG | Silicon Labs | Si510 | 156.25MHz | 3.3V | ±25ppm |
531BC125M000DG | Silicon Labs | Si531 | 125MHz | 3.3V | ±7ppm |
530AC125M000DG | Silicon Labs | Si530 | 125MHz | 3.3V | ±7ppm |
531FB106M250DG | Silicon Labs | Si531 | 106.25MHz | 2.5V | ±20ppm |
531AC156M250DG | Silicon Labs | Si531 | 156.25MHz | 3.3V | ±7ppm |
531AC200M000DG | Silicon Labs | Si531 | 200MHz | 3.3V | ±7ppm |
531BC148M500DG | Silicon Labs | Si531 | 148.5MHz | 3.3V | ±7ppm |
530AC200M000DG | Silicon Labs | Si530 | 200MHz | 3.3V | ±7ppm |
530BC200M000DG | Silicon Labs | Si530 | 200MHz | 3.3V | ±7ppm |
531BC156M250DG | Silicon Labs | Si531 | 156.25MHz | 3.3V | ±7ppm |
530FC200M000DG | Silicon Labs | Si530 | 200MHz | 2.5V | ±7ppm |
536BB156M250DG | Silicon Labs | Si536 | 156.25MHz | 3.3V | ±20ppm |
536FB156M250DG | Silicon Labs | Si536 | 156.25MHz | 2.5V | ±20ppm |
536AB156M250DG | Silicon Labs | Si536 | 156.25MHz | 3.3V | ±20ppm |
510FBA125M000BAG | Silicon Labs | Si510 | 125MHz | 2.5V | ±25ppm |
511BBA000149BAG | Silicon Labs | Si511 | 74.175824MHz | 3.3V | ±25ppm |
510FBA100M000BAG | Silicon Labs | Si510 | 100MHz | 2.5V | ±25ppm |
511FBA106M250BAG | Silicon Labs | Si511 | 106.25MHz | 2.5V | ±25ppm |
510BBA106M250BAG | Silicon Labs | Si510 | 106.25MHz | 3.3V | ±25ppm |
511BBA125M000AAG | Silicon Labs | Si511 | 125MHz | 3.3V | ±25ppm |
510BBA100M000AAG | Silicon Labs | Si510 | 100MHz | 3.3V | ±25ppm |
510BBA125M000AAG | Silicon Labs | Si510 | 125MHz | 3.3V | ±25ppm |
511FBA100M000AAG | Silicon Labs | Si511 | 100MHz | 2.5V | ±25ppm |
511BBA106M250AAG | Silicon Labs | Si511 | 106.25MHz | 3.3V | ±25ppm |
511FBA148M500BAG | Silicon Labs | Si511 | 148.5MHz | 2.5V | ±25ppm |
510FBA148M500BAG | Silicon Labs | Si510 | 148.5MHz | 2.5V | ±25ppm |
511BBA156M250BAG | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
511FBA156M250BAG | Silicon Labs | Si511 | 156.25MHz | 2.5V | ±25ppm |
510BBA148M500BAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |
511BBA156M250AAG | Silicon Labs | Si511 | 156.25MHz | 3.3V | ±25ppm |
510FBA156M250AAG | Silicon Labs | Si510 | 156.25MHz | 2.5V | ±25ppm |
511ABA155M520AAG | Silicon Labs | Si511 | 155.52MHz | 3.3V | ±25ppm |
510FBA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 2.5V | ±25ppm |
511BBA155M520AAG | Silicon Labs | Si511 | 155.52MHz | 3.3V | ±25ppm |
510BBA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |
510ABA148M500AAG | Silicon Labs | Si510 | 148.5MHz | 3.3V | ±25ppm |
510DBA100M000AAG | Silicon Labs | Si510 | 100MHz | 3.3V | ±25ppm |
531AC125M000DG | Silicon Labs | Si531 | 125MHz | 3.3V | ±7ppm |
531FC125M000DG | Silicon Labs | Si531 | 125MHz | 2.5V | ±7ppm |
530AC156M250DG | Silicon晶振 | Si530 | 156.25MHz | 3.3V | ±7ppm |
531FC156M250DG | Silicon Labs | Si531 | 156.25MHz | 2.5V | ±7ppm |
531FC148M500DG | Silicon Labs | Si531 | 148.5MHz | 2.5V | ±7ppm |
531AC155M520DG | Silicon Labs | Si531 | 155.52MHz | 3.3V | ±7ppm |
530AC155M520DG | Silicon Labs | Si530 | 155.52MHz | 3.3V | ±7ppm |
531BC155M520DG | Silicon Labs | Si531 | 155.52MHz | 3.3V | ±7ppm |
531FC200M000DG | Silicon Labs | Si531 | 200MHz | 2.5V | ±7ppm |
530BC148M500DG | Silicon Labs | Si530 | 148.5MHz | 3.3V | ±7ppm |
536EB156M250DG | Silicon Labs | Si536 | 156.25MHz | 2.5V | ±20ppm |
536BB125M000DG | Silicon Labs | Si536 | 125MHz | 3.3V | ±20ppm |
531AC622M080DG | Silicon Labs | Si531 | 622.08MHz | 3.3V | ±7ppm |
531AC312M500DG | Silicon Labs | Si531 | 312.5MHz | 3.3V | ±7ppm |
510ABA000149BAG | Silicon Labs | Si510 | 74.175824MHz | 3.3V | ±25ppm |
510BBA000149BAG | Silicon Labs | Si510 | 74.175824MHz | 3.3V | ±25ppm |
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