频率：200MHZ
尺寸：5.00mmx3.20mm
6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振，尺寸5.00mmx3.20mm，频率为200MHZ，输出逻辑LVPECL，电压3.3V ，脚位 6-SMD，XO时钟振荡器（标准），LVPECL差分振荡器，差分晶振，贴片差分晶振，5032mm差分晶振，有源晶体振荡器，石英晶体振荡器，OSC晶振，石英差分晶振，低抖动差分晶振，低功耗差分晶振，电信专用差分晶振，交换机差分晶振，路由器差分晶振，光纤通道差分晶振，产品很适合用于SONET/SDH/OTN，千兆以太网，光纤通道/SAS/SATA，PCI Express，3G-SDI/HD-SDI/SDI，电信，交换机/路由器，FPGA/ASIC时钟生成等。
Si510/511 XO有源石英晶振采用Skyworks Solutions的先进DSPLL技术以提供从100kHz到250MHz的任何频率。与传统XO不同其中每个输出频率需要不同的晶体，Si510/511使用一个固定晶体和Skyworks Solutions的专有DSPLL合成器，以生成该范围内的任何频率。此IC基于该方法允许晶体谐振器提供增强的可靠性，改进的机械坚固性和优异的稳定性.6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振.
6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振，尺寸5.00mmx3.20mm，频率为200MHZ，输出逻辑LVPECL，电压3.3V ，脚位 6-SMD，XO时钟振荡器（标准），LVPECL差分振荡器，差分晶振，贴片差分晶振，5032mm差分晶振，有源晶体振荡器，石英晶体振荡器，OSC晶振，石英差分晶振，低抖动差分晶振，低功耗差分晶振，电信专用差分晶振，交换机差分晶振，路由器差分晶振，光纤通道差分晶振，产品很适合用于SONET/SDH/OTN，千兆以太网，光纤通道/SAS/SATA，PCI Express，3G-SDI/HD-SDI/SDI，电信，交换机/路由器，FPGA/ASIC时钟生成等。
Si510/511 XO有源石英晶振采用Skyworks Solutions的先进DSPLL技术以提供从100kHz到250MHz的任何频率。与传统XO不同其中每个输出频率需要不同的晶体，Si510/511使用一个固定晶体和Skyworks Solutions的专有DSPLL合成器，以生成该范围内的任何频率。此IC基于该方法允许晶体谐振器提供增强的可靠性，改进的机械坚固性和优异的稳定性.6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振.
6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振 参数表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
| Supply Voltage | V DD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | |||||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | |||||||||||||||||||
| 1.8 V option | 1.71 | 1.8 | 1.89 | V | |||||||||||||||||||
| Supply Current | IDD |
CMOS, 100 MHz, single-ended |
— | 21 | 26 | mA | |||||||||||||||||
|
LVDS (output enabled) |
— | 19 | 23 | mA | |||||||||||||||||||
|
LVPECL (output enabled) |
— | 39 | 43 | mA | |||||||||||||||||||
|
HCSL (output enabled) |
— | 41 | 44 | mA | |||||||||||||||||||
|
Tristate (output disabled) |
— | — | 18 | mA | |||||||||||||||||||
| OE "1" Setting | VIH | See Note | 0.80 x V DD | — | — | V | |||||||||||||||||
| OE "0" Setting | VIL | See Note | — | — | 0.20 x V DD | V | |||||||||||||||||
|
OE Internal Pull-Up/Pull- Down Resistor* |
RI | — | 45 | — | kΩ | ||||||||||||||||||
| Operating Temperature | TA | –40 | — | 85 | oC | ||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
| Nominal Frequency | FO | CMOS, Dual CMOS | 0.1 | — | 212.5 | MHz | |||||||||||||||||
| FO | LVDS/LVPECL/HCSL | 0.1 | — | 250 | MHz | ||||||||||||||||||
| Total Stability* | Frequency Stability Grade C | –30 | — | +30 | ppm | ||||||||||||||||||
| Frequency Stability Grade B | –50 | — | +50 | ppm | |||||||||||||||||||
| Frequency Stability Grade A | –100 | — | +100 | ppm | |||||||||||||||||||
| Temperature Stability | Frequency Stability Grade C | –20 | — | +20 | ppm | ||||||||||||||||||
| Frequency Stability Grade B | –25 | — | +25 | ppm | |||||||||||||||||||
| Frequency Stability Grade A | –50 | — | +50 | ppm | |||||||||||||||||||
| Startup Time | TSU |
Minimum V DD until output frequency (FO) within specification |
— | — | 10 | ms | |||||||||||||||||
| Disable Time | TD | FO> 10 MHz | — | — | 5 | µs | |||||||||||||||||
| FO< 10 MHz | — | — | 40 | µs | |||||||||||||||||||
| Enable Time | TE | FO> 10 MHz | — | — | 20 | µs | |||||||||||||||||
| FO< 10 MHz | — | — | 60 | µs | |||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | |||||||||||||||||
|
CMOS Output Logic High |
V OH | 0.85 x V DD | — | — | V | ||||||||||||||||||
|
CMOS Output Logic Low |
VOL | — | — | 0.15 x V DD | V | ||||||||||||||||||
|
CMOS Output Logic High Drive |
I OH | 3.3 V | –8 | — | — | mA | |||||||||||||||||
| 2.5 V | –6 | — | — | mA | |||||||||||||||||||
| 1.8 V | –4 | — | — | mA | |||||||||||||||||||
|
CMOS Output Logic Low Drive |
I OL | 3.3 V | 8 | — | — | mA | |||||||||||||||||
| 2.5 V | 6 | — | — | mA | |||||||||||||||||||
| 1.8 V | 4 | — | — | mA | |||||||||||||||||||
|
CMOS Output Rise/Fall Time (20 to 80% V DD) |
TR/T F |
0.1 to 212.5 MHz, CL = 15 pF |
0.45 | 0.8 | 1.2 | ns | |||||||||||||||||
|
0.1 to 212.5 MHz, CL = no load |
0.3 | 0.6 | 0.9 | ns | |||||||||||||||||||
|
LVPECL Output Rise/Fall Time (20 to 80% VDD) |
TR/T F | 100 | — | 565 | ps | ||||||||||||||||||
|
HCSL Output Rise/Fall Time (20 to 80% VDD) |
TR/T F | 100 | — | 470 | ps | ||||||||||||||||||
|
LVDS Output Rise/Fall Time (20 to 80% VDD) |
TR/T F | 350 | — | 800 | ps | ||||||||||||||||||
|
LVPECL Output Common Mode |
VOC |
50 Ω to V DD – 2 V, single-ended |
— |
V DD – 1.4 V |
— | V | |||||||||||||||||
| LVPECL Output Swing | VO |
50 Ω to V DD – 2 V, single-ended |
0.55 | 0.8 | 0.90 | VPPSE | |||||||||||||||||
|
LVDS Output Common Mode |
VOC |
100 Ω line-line V DD= 3.3/2.5 V |
1.13 | 1.23 | 1.33 | V | |||||||||||||||||
| 100 Ω line-line, V DD= 1.8 V | 0.83 | 0.92 | 1.00 | V | |||||||||||||||||||
| LVDS Output Swing | VO |
Single-ended, 100 Ω differential termination |
0.25 | 0.35 | 0.45 | VPPSE | |||||||||||||||||
|
HCSL Output Common Mode |
VOC | 50 Ω to ground | 0.35 | 0.38 | 0.42 | V | |||||||||||||||||
| HCSL Output Swing | VO | Single-ended | 0.58 | 0.73 | 0.85 | VPPSE | |||||||||||||||||
| Duty Cycle | DC | All formats | 48 | 50 | 52 | % | |||||||||||||||||
6G转换机晶振 511ABA200M000BAG Silicon振荡器 Si511低抖动差分晶振 尺寸图
OSC晶振产品特性：
支持来自的任何频率
100千赫至250兆赫
低抖动操作
2至4周交付周期
总体稳定性包括10年变老
用于电源的片上LDO稳压器
电源噪声滤波
3.3、2.5或1.8 V操作
差分（LVPECL、LVDS、HCSL）或CMOS输出选项
可选集成1:2 CMOS
扇出缓存
OE和接通电源
行业标准5 x 7、3.2 x 5、和2.5 x 3.2毫米封装
无铅，符合RoHS
–40至85℃操作
更多相关Silicon晶振型号
| Manufacturer Part Number原厂代码 | Manufacturer品牌 | Series型号 | Frequency 频率 | Voltage - Supply电压 | Frequency Stability频率稳定度 |
| 511ABA148M500BAG | Silicon Labs | Si511 | 148.5MHz | 3.3V | ±25ppm |
| 511ABA155M520BAG | Silicon Labs | Si511 | 155.52MHz | 3.3V | ±25ppm |
| 510BBA000110BAG | Silicon Labs | Si510 | 148.35165MHz | 3.3V | ±25ppm |
| 510FBA000110BAG | Silicon Labs | Si510 | 148.35165MHz | 2.5V | ±25ppm |
| 510BBA155M520BAG | Silicon Labs | Si510 | 155.52MHz | 3.3V | ±25ppm |
| 510FBA155M520AAG | Silicon Labs | Si510 | 155.52MHz | 2.5V | ±25ppm |
| 510ABA000110AAG | Silicon Labs | Si510 | 148.35165MHz | 3.3V | ±25ppm |
| 510FBA000110AAG | Silicon Labs | Si510 | 148.35165MHz | 2.5V | ±25ppm |
| 511FBA155M520AAG | Silicon Labs | Si511 | 155.52MHz | 2.5V | ±25ppm |
| 510ABA155M520AAG | Silicon Labs | Si510 | 155.52MHz | 3.3V | ±25ppm |
| 511ABA148M500AAG | Silicon Labs | Si511 | 148.5MHz | 3.3V | ±25ppm |
| 511FBA148M500AAG | Silicon Labs | Si511 | 148.5MHz | 2.5V | ±25ppm |
| 511FBA156M250AAG | Silicon Labs | Si511 | 156.25MHz | 2.5V | ±25ppm |
| 510FBA212M500BAG | Silicon Labs | Si510 | 212.5MHz | 2.5V | ±25ppm |
| 511FBA212M500BAG | Silicon Labs | Si511 | 212.5MHz | 2.5V | ±25ppm |
| 510ABA212M500BAG | Silicon Labs | Si510 | 212.5MHz | 3.3V | ±25ppm |
| 511ABA200M000BAG | Silicon Labs | Si511 | 200MHz | 3.3V | ±25ppm |
| 510ABA212M500AAG | Silicon Labs | Si510 | 212.5MHz | 3.3V | ±25ppm |
| 510BBA212M500AAG | Silicon Labs | Si510 | 212.5MHz | 3.3V | ±25ppm |
| 510FBA212M500AAG | Silicon Labs | Si510 | 212.5MHz | 2.5V | ±25ppm |
| 510FBA200M000AAG | Silicon Labs | Si510 | 200MHz | 2.5V | ±25ppm |
| 511ABA212M500AAG | Silicon Labs | Si511 | 212.5MHz | 3.3V | ±25ppm |
| 510EBA125M000AAG | Silicon Labs | Si510 | 125MHz | 2.5V | ±25ppm |
| 510ACA47M2500AAG | Silicon Labs | Si510 | 47.25MHz | 3.3V | ±20ppm |
| 530AC106M250DG | Silicon Labs | Si530 | 106.25MHz | 3.3V | ±7ppm |
| 530EC106M250DG | Silicon Labs | Si530 | 106.25MHz | 2.5V | ±7ppm |
| 531AC106M250DG | Silicon Labs | Si531 | 106.25MHz | 3.3V | ±7ppm |
| 531EC106M250DG | Silicon Labs | Si531 | 106.25MHz | 2.5V | ±7ppm |
| 530FC106M250DG | Silicon Labs | Si530 | 106.25MHz | 2.5V | ±7ppm |
| 530BC106M250DG | Silicon Labs | Si530 | 106.25MHz | 3.3V | ±7ppm |
| 531BC187M500DG | Silicon Labs | Si531 | 187.5MHz | 3.3V | ±7ppm |
| 530EC155M520DG | Silicon Labs | Si530 | 155.52MHz | 2.5V | ±7ppm |
| 531EC155M520DG | Silicon Labs | Si531 | 155.52MHz | 2.5V | ±7ppm |
| 530EC187M500DG | Silicon Labs | Si530 | 187.5MHz | 2.5V | ±7ppm |
| 531AC187M500DG | Silicon Labs | Si531 | 187.5MHz | 3.3V | ±7ppm |
| 531EC187M500DG | Silicon Labs | Si531 | 187.5MHz | 2.5V | ±7ppm |
| 530AC000110DG | Silicon Labs | Si530 | 148.35165MHz | 3.3V | ±7ppm |
| 530AC148M500DG | Silicon Labs | Si530 | 148.5MHz | 3.3V | ±7ppm |
| 530EC000110DG | Silicon Crystal | Si530 | 148.35165MHz | 2.5V | ±7ppm |
| 530FC000110DG | Silicon Labs | Si530 | 148.35165MHz | 2.5V | ±7ppm |
| 531EC000110DG | Silicon Labs | Si531 | 148.35165MHz | 2.5V | ±7ppm |
| 531EC148M500DG | Silicon Labs | Si531 | 148.5MHz | 2.5V | ±7ppm |
| 530BC155M520DG | Silicon Labs | Si530 | 155.52MHz | 3.3V | ±7ppm |
| 530EC156M250DG | Silicon Labs | Si530 | 156.25MHz | 2.5V | ±7ppm |
| 530AC187M500DG | Silicon Labs | Si530 | 187.5MHz | 3.3V | ±7ppm |
| 530BC187M500DG | Silicon Labs | Si530 | 187.5MHz | 3.3V | ±7ppm |
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