常用于晶振产品的当属电子产品,作为电子产品与晶振的关系,相当于第二个灵魂,也是元器件中缺一不可的配件,当下市场中最常用到晶振产品的就有手机,蓝牙,通信设备等领域,而晶振中又可分为进口晶振和国产晶振,进口晶振在价格上面没有太大优势,性能较于国产晶振更加出色.随着国家大力发展半导体和国内研发实力的提升,我们的有源晶振已不逊色于进口的顶级产品,甚至在某些地方还要更胜一筹。EPSON进口有源晶振价格趋势由什么决定?X1G005601006900
石英晶体振荡器的应用:1、石英钟走时准、耗电省、经久耐用为其最大优点。不论是老式石英钟或是新式多功能石英钟都是以石英晶体振荡器为核心电路,其频率精度决定了电子钟表的走时精度。石英晶体振荡器原理的示意所示,其中V1和V2构成CMOS反相器石英晶体Q与振荡电容C1及微调电容C2构成振荡系统,这里石英晶体相当于电感。振荡系统的元件参数确定了振频率。一般Q、C1及C2均为外接元件。另外R1为反馈电阻,R2为振荡的稳定电阻,它们都集成在电路内部。故无法通过改变C1或C2的数值来调整走时精度。但此时仍可用加接一只电容C有方法,来改变振荡系统参数,以调整走时精度。
Product Number | 爱普生晶振型号 | Frequency | LxWxH | Output Wave | Supply Voltage | Ope Temperature | Freq. Tol. | I [Max] |
X1G005601006700 | SG-8018CG | 7.372800 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601006800 | SG-8018CG | 11.520000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601006900 | SG-8018CG | 8.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601007000 | SG-8018CG | 13.333000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601007100 | SG-8018CG | 28.636360 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601007200 | SG-8018CG | 44.236800 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601007300 | SG-8018CG | 130.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 8.1 mA |
X1G005601007400 | SG-8018CG | 8.192000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601007500 | SG-8018CG | 2.097152 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601007600 | SG-8018CG | 49.824000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601007700 | SG-8018CG | 133.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 8.1 mA |
X1G005601007800 | SG-8018CG | 19.200000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601007900 | SG-8018CG | 41.439990 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601008000 | SG-8018CG | 16.608000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601008100 | SG-8018CG | 33.333000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601008200 | SG-8018CG | 7.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601008300 | SG-8018CG | 33.176000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601008400 | SG-8018CG | 33.333000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601008500 | SG-8018CG | 7.372800 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601008600 | SG-8018CG | 4.800000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
Product Number | 爱普生晶振型号 | Frequency | LxWxH | Output Wave | Supply Voltage | Ope Temperature | Freq. Tol. | I [Max] |
X1G005601008700 | SG-8018CG | 18.400000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601008800 | SG-8018CG | 4.915200 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601008900 | SG-8018CG | 133.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 8.1 mA |
X1G005601009000 | SG-8018CG | 2.800000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601009100 | SG-8018CG | 22.579200 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601009200 | SG-8018CG | 0.680000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601009300 | SG-8018CG | 46.339200 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601009400 | SG-8018CG | 60.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005601009500 | SG-8018CG | 3.579545 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601009700 | SG-8018CG | 16.666600 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601009800 | SG-8018CG | 13.333333 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601009900 | SG-8018CG | 54.000000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005601010000 | SG-8018CG | 3.686400 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |
X1G005601010200 | SG-8018CG | 22.579200 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601010300 | SG-8018CG | 64.478100 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005601010400 | SG-8018CG | 59.737100 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005601010500 | SG-8018CG | 64.342677 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 5.2 mA |
X1G005601010600 | SG-8018CG | 43.540157 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601010700 | SG-8018CG | 25.600000 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 4.4 mA |
X1G005601010800 | SG-8018CG | 19.660800 MHz | 2.50 x 2.00 x 0.80 mm | CMOS | 1.620 to 3.630 V | -40 to 105 °C | +/-50 ppm | ≤ 3.5 mA |